BAS55 datasheet(3/7 Pages) PHILIPS

номер детали	BAS55

подробное описание детали	High-speed diode

PDF	7 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 7 page

1996 Sep 10

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS55

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. Tamb =25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3; IF = 200 mA; DC value;

note 1

−

1.0

reverse current

see Fig.5

VR =60V

−

100

VR =60V; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

2.5

trr

reverse recovery time

when switched from IF = 400 mA to

IR = 400 mA; RL = 100 Ω;

measured at IR = 40 mA; see Fig.7

−

6ns

Vfr

forward recovery voltage

when switched to IF = 400 mA;

tr = 30 ns; see Fig.8

−

when switched to IF = 400 mA;

tr = 100 ns; see Fig.8

−

1.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

330

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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