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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAS21 датащи(PDF) 4 Page - NXP Semiconductors |
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BAS21 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1999 May 26 4 Philips Semiconductors Product specification General purpose diodes BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V IR reverse current see Fig.5 BAS19 VR = 100 V 100 nA VR = 100 V; Tj = 150 °C 100 µA BAS20 VR = 150 V 100 nA VR = 150 V; Tj = 150 °C 100 µA BAS21 VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 330 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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