поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

BAS17 датащи(PDF) 2 Page - NXP Semiconductors

номер детали BAS17
подробное описание детали  Low-voltage stabistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS17 датащи(HTML) 2 Page - NXP Semiconductors

  BAS17 Datasheet HTML 1Page - NXP Semiconductors BAS17 Datasheet HTML 2Page - NXP Semiconductors BAS17 Datasheet HTML 3Page - NXP Semiconductors BAS17 Datasheet HTML 4Page - NXP Semiconductors BAS17 Datasheet HTML 5Page - NXP Semiconductors BAS17 Datasheet HTML 6Page - NXP Semiconductors BAS17 Datasheet HTML 7Page - NXP Semiconductors BAS17 Datasheet HTML 8Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
1999 May 31
2
Philips Semiconductors
Product specification
Low-voltage stabistor
BAS17
FEATURES
• Low-voltage stabilization
• Forward voltage range:
580 to 960 mV
• Total power dissipation:
max. 250 mW.
APPLICATIONS
• Low-voltage stabilization e.g.
– Bias stabilizer in class-B output
stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a
small SOT23 plastic package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
Marking code: A91.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
5V
IF
continuous forward current
−
200
mA
Ptot
total power dissipation
Tamb =25 °C
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
580
−
660
mV
IF = 1 mA
665
−
745
mV
IF = 5 mA
725
−
805
mV
IF = 10 mA
750
−
830
mV
IF = 100 mA
870
−
960
mV
IR
reverse current
VR =4V
−−
5
µA
rdif
differential resistance
IF = 0.5 mA
−
120
−Ω
IF =2mA
−
80
−Ω
SF
temperature coefficient
IF =1mA
−−1.8
−
mV/K
Cd
diode capacitance
VR =0V; f=1MHz
−−
140
pF



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com