| поискавой системы для электроныых деталей |
|
SN74HCS573 датащи(PDF) 13 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
SN74HCS573 датащи(HTML) 13 Page - Texas Instruments |
|
13 / 25 page ![]() 9.2.1.3 Output Considerations The positive supply voltage is used to produce the output HIGH voltage. Drawing current from the output will decrease the output voltage as specified by the VOH specification in the Electrical Characteristics. The ground voltage is used to produce the output LOW voltage. Sinking current into the output will increase the output voltage as specified by the VOL specification in the Electrical Characteristics. Push-pull outputs that could be in opposite states, even for a very short time period, should never be connected directly together. This can cause excessive current and damage to the device. Two channels within the same device with the same input signals can be connected in parallel for additional output drive strength. Unused outputs can be left floating. Do not connect outputs directly to VCC or ground. Refer to the Feature Description section for additional information regarding the outputs for this device. 9.2.2 Detailed Design Procedure 1. Add a decoupling capacitor from VCC to GND. The capacitor needs to be placed physically close to the device and electrically close to both the VCC and GND pins. An example layout is shown in the Layout section. 2. Ensure the capacitive load at the output is ≤ 50 pF. This is not a hard limit; it will, however, ensure optimal performance. This can be accomplished by providing short, appropriately sized traces from the SN74HCS573 to one or more of the receiving devices. 3. Ensure the resistive load at the output is larger than (VCC / IO(max)) Ω. This will ensure that the maximum output current from the Absolute Maximum Ratings is not violated. Most CMOS inputs have a resistive load measured in MΩ; much larger than the minimum calculated previously. 4. Thermal issues are rarely a concern for logic gates; the power consumption and thermal increase, however, can be calculated using the steps provided in the application report, CMOS Power Consumption and Cpd Calculation. 9.2.3 Application Curve Q1 D1 LE Figure 9-2. Example timing diagram for one channel www.ti.com SN74HCS573 SCLS876A – OCTOBER 2021 – REVISED DECEMBER 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: SN74HCS573 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |