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BAS11 датащи(PDF) 4 Page - NXP Semiconductors

номер детали BAS11
подробное описание детали  Controlled avalanche rectifiers
PDF  7 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS11 датащи(HTML) 4 Page - NXP Semiconductors

  BAS11 Datasheet HTML 1Page - NXP Semiconductors BAS11 Datasheet HTML 2Page - NXP Semiconductors BAS11 Datasheet HTML 3Page - NXP Semiconductors BAS11 Datasheet HTML 4Page - NXP Semiconductors BAS11 Datasheet HTML 5Page - NXP Semiconductors BAS11 Datasheet HTML 6Page - NXP Semiconductors BAS11 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
0.6
IF(AV)
(A)
0.4
0.2
0
40
200
MGD293
80
120
160
Ttp (
oC)
Lead length 10 mm.
a = 1.57; VR =VRRMmax; δ = 0.5.
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
IF(AV)
(A)
40
200
0.4
0.3
0.1
0
0.2
80
120
160
Tamb (°C)
MGD295
Device mounted as shown in Fig.8.
a = 1.57; VR =VRRMmax; δ = 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
handbook, halfpage
0
0.1
0.2
0.4
0.5
2.5
1.57
P
(W)
0
0.4
MGD292
0.3
IF(AV)(A)
0.3
0.2
0.1
1.42
a = 3
2
Solid line: Tj =25 °C.
Dotted line: Tj = 150 °C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
012
VF (V)
3
5
IF
(A)
0
4
MGD294
3
2
1



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