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ICS841S012DI датащи(PDF) 11 Page - Renesas Technology Corp |
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ICS841S012DI датащи(HTML) 11 Page - Renesas Technology Corp |
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11 / 24 page ![]() 841S012DI Datasheet ©2016 Integrated Device Technology, Inc January 4, 2016 11 FIGURE 3. GENERAL DIAGRAM FOR LVCMOS DRIVER TO XTAL INPUT INTERFACE LVCMOS TO XTAL INTERFACE The XTAL_IN input can accept a single-ended LVCMOS signal through an AC coupling capacitor. A general interface diagram is shown in Figure 3. The XTAL_OUT pin can be left floating. The input edge rate can be as slow as 10ns. For LVCMOS signals, it is recommended that the amplitude be reduced from full swing to half swing in order to prevent signal interference with the power rail and to reduce noise. This configuration requires that the output impedance of the driver (Ro) plus the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 Ω applications, R1 and R2 can be 100 Ω. This can also be accomplished by removing R1 and making R2 50 Ω. By overdriving the crystal oscillator, the device will be functional, but note the device performance is guaranteed by using a quartz crystal. R2 Zo = 50 VDD Ro Zo = Ro + Rs R1 VDD XTAL_IN XTAL_OUT .1uf Rs CRYSTAL INPUT INTERFACE The 841S012DI has been characterized with 18pF parallel resonant crystals. The capacitor values shown in Figure 2 below were determined using a 25MHz, 18pF parallel resonant crystal FIGURE 2. CRYSTAL INPUT INTERFACE and were chosen to minimize the ppm error. NOTE: External tuning capacitors must be used for proper operations. XTAL_IN XTAL_OUT X1 18pF Parallel Crystal C1 15pF C2 22pF |
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