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CD631615B датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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CD631615B датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 CD631615B Thyristor Modules FEATURES · Long-term stability · Low Leakage Current · Base plate: Copper · Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM VDRM Repetitive Peak Reverse Voltage Repetitive Peak Forward Blocking Voltage 1600 V IT(AV) Average on-state current sin. 180; Tc = 85(100)℃ 150 A ITSM Peak, One-cycle, Non-repetitive Surge Current Tvj = 25℃; 10ms 5400 A Tvj = 125℃; 10ms 5000 I2t For Fusing Tvj = 25℃; 8,3 ...10ms 1450 KA2S Tvj = 125℃; 8,3 ...10ms 125 Viso isolation voltage a. c. 50Hz; r.m.s. ; 1s/1min 3600/3000 V~ TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT Rth j-c Thermal Resistance, Junction to Case per thyristor / per module 0.17/0.085 K/W |
Аналогичный номер детали - CD631615B |
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Аналогичное описание - CD631615B |
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