HCTS00MS

FN2139 Rev 2.00

Page 2 of 8

August 1995

Absolute Maximum Ratings

Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input

10mA

DC Drain Current, Any One Output

25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Thermal Resistance

JA

JC

SBDIP Package. . . . . . . . . . . . . . . . . . . .

74oC/W

24oC/W

Ceramic Flatpack Package . . . . . . . . . . .

116oC/W

30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide

heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent

damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed

under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

GROUP

A SUB-

GROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Quiescent Current

ICC

VCC = 5.5V,

VIN = VCC or GND

1+25oC-

10

A

2, 3

+125oC, -55oC

-

200

A

Output Current

(Sink)

IOL

VCC = 4.5V, VIH = 4.5V,

VOUT = 0.4V, VIL = 0V

1+25oC4.8

-

mA

2, 3

+125oC, -55oC4.0

-

mA

Output Current

(Source)

IOH

VCC = 4.5V, VIH = 4.5V,

VOUT = VCC -0.4V,

VIL = 0V

1+25oC-4.8

-

mA

2, 3

+125oC, -55oC-4.0

-

mA

Output Voltage Low

VOL

VCC = 4.5V, VIH = 2.25V,

IOL = 50

A, VIL = 0.8V

1, 2, 3

+25oC, +125oC, -55oC-

0.1

V

VCC = 5.5V, VIH = 2.75V,

IOL = 50

A, VIL = 0.8V

1, 2, 3

+25oC, +125oC, -55oC-

0.1

V

Output Voltage High

VOH

VCC = 4.5V, VIH = 2.25V,

IOH = -50

A, VIL = 0.8V

1, 2, 3

+25oC, +125oC, -55oCVCC

-0.1

-V

VCC = 5.5V, VIH = 2.75V,

IOH = -50

A, VIL = 0.8V

1, 2, 3

+25oC, +125oC, -55oCVCC

-0.1

-V

Input Leakage

Current

IIN

VCC = 5.5V, VIN = VCC or

GND

1+25oC-

0.5

A

2, 3

+125oC, -55oC-

5.0

A

Noise Immunity

Functional Test

FN

VCC = 4.5V,

VIH = 2.25,

VIL = 0.80 (Note 2)

7, 8A, 8B

+25oC, +125oC, -55oC

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NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO

 4.0V is recognized as a logic “1”, and VO  0.5V is recognized as a logic “0”.