1996 Sep 03

2

Philips Semiconductors

Product specification

High-speed diodes

BA316; BA317; BA318

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• High switching speed: max. 4 ns

• General application

• Continuous reverse voltage: 10 V,

30 V, 50 V

• Repetitive peak reverse voltage:

max. 15 V, 40 V, 60 V

• Repetitive peak forward current:

max. 225 mA.

APPLICATIONS

• High-speed switching.

DESCRIPTION

The BA316, BA317, BA318 are high-speed switching diodes fabricated in

planar technology, and encapsulated in hermetically sealed leaded glass

SOD27 (DO-35) packages.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

The diodes are type branded.

handbook, halfpage

MAM246

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

BA316

−

15

V

BA317

−

40

V

BA318

−

60

V

continuous reverse voltage

BA316

−

10

V

BA317

−

30

V

BA318

−

50

V

continuous forward current

see Fig.2; note 1

−

100

mA

repetitive peak forward current

−

225

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

350

mW

storage temperature

−65

+200

°C

junction temperature

−

200

°C