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SP3243 датащи(PDF) 2 Page - Sipex Corporation |
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SP3243 датащи(HTML) 2 Page - Sipex Corporation |
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2 / 19 page ![]() Rev. 6/30/03 SP3238 Intelligent +3.0V to +5.5V RS-232 Transceiver © Copyright 2003 Sipex Corporation 2 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC.......................................................-0.3V to +6.0V V+ (NOTE 1).......................................-0.3V to +7.0V V- (NOTE 1)........................................+0.3V to -7.0V V+ + |V-| (NOTE 1)...........................................+13V I CC (DC VCC or GND current).........................+100mA InputVoltages TxIN, ONLINE, SHUTDOWN, .....................................-0.3V to +6.0V RxIN...................................................................+25V OutputVoltages TxOUT.............................................................+13.2V RxOUT, STATUS.......................-0.3V to (V CC + 0.3V) Short-CircuitDuration TxOUT.....................................................Continuous Storage Temperature......................-65°C to +150°C Power Dissipation per package 28-pin SSOP (derate 11.2mW/oC above +70oC).................900mW 28-pin TSSOP (derate 13.2mW/oC above +70oC)...............1100mW ELECTRICAL CHARACTERISTICS V CC = +3.0 to +5.5, C1 -C4 = 0.1µF (tested at 3.3V + 5%), C1-C4 = 0.22µF (tested at 3.3V + 10%), C1 = 0.047µF, and C2-C4 = 0.33µF (tested at 5.0V + 10%), T A = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) Note 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. R E T E M A R A P. N I M. P Y T. X A MS T I N US N O I T I D N O C S C I T S I R E T C A R A H C C D E N I L - N O O T U A , t n e r r u C y l p p u S ® 0 . 10 1 µA , D N G = E N I L N O , n e p o N I x R ll A V = N W O D T U H S C C D N G = N I x T ll a , V r o C C n w o d t u h S , t n e r r u C y l p p u S0 . 10 1 µA D N G = N I x T ll a , D N G = N W O D T U H S V r o C C E N I L - N O O T U A , t n e r r u C y l p p u S ® d e l b a s i D 3 . 00 . 1 A m V = N W O D T U H S = E N I L N O C C , V r o D N G = N I x T ll a , d a o l o n C C S T U P T U O R E V I E C E R D N A S T U P N I C I G O L d l o h s e r h T c i g o L t u p n I W O L H G I H 4 . 2 8 . 0V V C C N I x T , V 0 . 5 + r o V 3 . 3 + = N W O D T U H S , E N I L N O t n e r r u C e g a k a e L t u p n I+ 1 0 . 0+ 0 . 1 µA N W O D T U H S , E N I L N O , N I x T T A C ° 5 2 = t n e r r u C e g a k a e L t u p t u O+ 5 0 . 0+ 0 1 µA d e l b a s i D s r e v i e c e R W O L e g a t l o V t u p t u O4 . 0V I T U O A m 6 . 1 = H G I H e g a t l o V t u p t u OV C C 6 . 0 -V C C 1 . 0 -V I T U O A m 0 . 1 - = |
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