PBLS6022D_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 13 August 2009

6 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

7.

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab510

10

1

102

103

Zth(j-a)

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

δ = 1

0.75

0.50

0.33

0.10

0.05

0.02

0.01

0.20

0

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −60 V; IE =0A

-

-

−100 nA

VCB = −60 V; IE =0A;

Tj = 150 °C

--

−50

µA

ICES

collector-emitter

cut-off current

VCE = −48 V; VBE =0A

-

-

−100 nA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

-

-

−100 nA

hFE

DC current gain

VCE = −2 V; IC = −100 mA

180

285

-

VCE = −2 V; IC = −500 mA

[1] 150

255

-

VCE = −2 V; IC = −1A

[1] 140

210

-

VCE = −2 V; IC = −1.5 A

[1] 120

185

-

VCEsat

collector-emitter

saturation voltage

IC = −0.5 A; IB = −50 mA

[1] -

−65

−100 mV

IC = −1 A; IB = −50 mA

[1] -

−130 −200 mV

IC = −1 A; IB = −100 mA

[1] -

−110 −170 mV

IC = −1.5 A; IB = −100 mA

[1] -

−165 −260 mV

RCEsat

collector-emitter

saturation resistance

IC = −1 A; IB = −100 mA

[1] -

110

170

m

Ω

IC = −1.5 A; IB = −100 mA

[1] -

110

175

m

Ω

VBEsat

base-emitter

saturation voltage

IC = −0.5 A; IB = −50 mA

[1] -

−0.85 −1V

IC = −1.5 A; IB = −100 mA

[1] -

−0.93 −1.1

V