CD4099BMS

FN3333 Rev 0.00

Page 4 of 10

December 1992

Output Current (Source)

IOH15

VDD =15V, VOUT = 13.5V

1, 2

+125oC-

-2.4

mA

-55oC-

-4.2

mA

Input Voltage Low

VIL

VDD = 10V, VOH > 9V, VOL < 1V

1, 2

+25oC, +125oC,

-55oC

-3

V

Input Voltage High

VIH

VDD = 10V, VOH > 9V, VOL < 1V

1, 2

+25oC, +125oC,

-55oC

+7

-

V

Propagation Delay

Data to Output

TPHL1

TPLH1

VDD = 10V

1, 2, 3

+25oC

-

150

ns

VDD = 15V

1, 2, 3

+25oC

-

100

ns

Propagation Delay

Write Disable to Output

TPHL2

TPLH2

VDD = 10V

1, 2, 3

+25oC

-

160

ns

VDD = 15V

1, 2, 3

+25oC

-

120

ns

Propagation Delay

Reset to Output

TPHL3

VDD = 10V

1, 2, 3

+25oC

-

160

ns

VDD = 15V

1, 2, 3

+25oC

-

130

ns

Propagation Delay

Address to Output

TPHL4

TPLH4

VDD = 10V

1, 2, 3

+25oC

-

200

ns

VDD = 15V

1, 2, 3

+25oC

-

150

ns

Transition Time

TTHL

TTLH

VDD = 10V

1, 2, 3

+25oC

-

100

ns

VDD = 15V

1, 2, 3

+25oC

-

80

ns

Minimum Hold time Data

to Write Disable

TH

VDD = 5V

1, 2, 3

+25oC

-

150

MHz

VDD = 10V

1, 2, 3

+25oC-

75

MHz

VDD = 15V

1, 2, 3

+25oC-

50

MHz

Minimum Data Setup

Time Data to Write

Disable

TS

VDD = 5V

1, 2, 3

+25oC

-

100

ns

VDD = 10V

1, 2, 3

+25oC

-

50

ns

VDD = 15V

1, 2, 3

+25oC

-

35

ns

Minimum Pulse Width

Data

TW

VDD = 5V

1, 2, 3

+25oC

-

200

ns

VDD = 10V

1, 2, 3

+25oC

-

100

ns

VDD = 15V

1, 2, 3

+25oC

-

80

ns

Minimum Pulse Width

Address

TW

VDD = 5V

1, 2, 3

+25oC

-

400

ns

VDD = 10V

1, 2, 3

+25oC

-

200

ns

VDD = 15V

1, 2, 3

+25oC

-

125

ns

Minimum Pulse Width

Reset

TW

VDD = 5V

1, 2, 3

+25oC

-

150

ns

VDD = 10V

1, 2, 3

+25oC

-

75

ns

VDD = 15V

1, 2, 3

+25oC

-

50

ns

Input Capacitance

CIN

Any inputs

1, 2

+25oC-

7.5

pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on

initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Supply Current

IDD

VDD = 20V, VIN = VDD or GND

1, 4

+25oC-

25

A

N Threshold Voltage

VNTH

VDD = 10V, ISS = -10

A

1, 4

+25oC

-2.8

-0.2

V

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

(Continued)

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX