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PBLS4002Y датащи(PDF) 5 Page - NXP Semiconductors |
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PBLS4002Y датащи(HTML) 5 Page - NXP Semiconductors |
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5 / 14 page ![]() 9397 750 13455 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 6 December 2004 5 of 14 Philips Semiconductors PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch VCE =−2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb =−55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb =−55 °C. Fig 1. TR1 (PNP): DC current gain as a function of collector current; typical values. Fig 2. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values. VCE =−2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb =−55 °C. Fig 3. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values. Fig 4. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values. 006aaa050 400 200 600 800 hFE 0 IC (mA) −10−1 −103 −102 −1 −10 (1) (2) (3) 006aaa051 IC (mA) −10−1 −103 −102 −1 −10 −102 −103 VCEsat (mV) −10 (1) (2) (3) 006aaa052 IC (mA) −10−1 −103 −102 −1 −10 −400 −800 −1200 VBE (mV) 0 (1) (2) (3) 006aaa053 −600 −800 −400 −1000 −1200 VBEsat (mV) −200 IC (mA) −10−1 −103 −102 −1 −10 (1) (2) (3) |
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