32

AT25DF256

DS-25DF256–035F–02/2022

Note:

1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.

2. Not 100% tested (value guaranteed by design and characterization).

3. Program and Erase operations characterized at -10°C to +85°C. Program and Erase operations at -40°C to -10°C require

a minimum of 1.7V.

13.6 Program and Erase Characteristics

Symbol

Parameter

1.65V-3.6V

2.3V-3.6V

Min

Typ

Max

Units

tPP

(1)

Page Program Time

256 Bytes

1.5

3.5

1.5

3.5

ms

tBP

Byte Program Time

12

8

µs

tPE

Page Erase Time

256 Bytes

6

25

6

25

ms

tBLKE(1)

Block Erase Time

4 Kbytes

50

75

50

60

ms

32 Kbytes

350

600

300

400

tCHPE(1)(2)

Chip Erase Time

350

600

300

400

ms

tOTPP(1)

OTP Security Register Program Time

400

950

400

950

µs

tWRSR

(2)

Write Status Register Time

20

40

20

40

ms