BCV65

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Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 4 — 27 July 2010

3 of 11

Nexperia

BCV65

NPN/PNP general-purpose transistor

6.

Thermal characteristics

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB).

7.

Characteristics

[1]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2]

VBE decreases by about 2 mV/K with increasing temperature.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

-

500

K/W

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =30V; IE =0A

-

-

15

nA

VCB =30V; IE =0A;

Tj = 150 °C

--

5

μA

hFE

DC current gain

VCE =5V; IC = 2 mA

75

-

800

VCEsat

collector-emitter

saturation voltage

IC =10mA;

IB =0.5 mA

-90

300

mV

IC = 100 mA;

IB =5mA

-

250

650

mV

VBEsat

base-emitter saturation

voltage

IC =10mA;

IB =0.5 mA

[1] -

700

-

mV

IC = 100 mA;

IB =5mA

[1] -

900

-

mV

VBE

base-emitter voltage

IC =2mA; VCE =5 V [2] 580

650

750

mV

IC =10mA;

VCE =5V

[2] --

820

mV