2002 Jun 12

2

Philips Semiconductors

Product specification

Band-switching diode

BA792

FEATURES

• Ceramic SMD package

• Low diode capacitance:

max. 1.1 pF

• Low diode forward resistance:

max. 0.7

Ω.

APPLICATIONS

• Low loss band-switching in VHF

television tuners

• Surface mount high-speed

switching circuits.

DESCRIPTION

Planar, high performance band-switching diode in a SOD110 very small

ceramic SMD package.

handbook, 4 columns

MAM139

ka

cathode mark

top view

side view

bottom view

ak

Fig.1 Simplified outline (SOD110) and symbol.

Marking code: L8.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board measuring 11

× 25 × 1.6 mm.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VR

continuous reverse voltage

−

35

V

IF

continuous forward current

−

100

mA

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VF

forward voltage

IF = 100 mA

1.1

V

IR

reverse current

VR = 20 V

10

nA

VR = 20 V; Tamb =75 °C1

µA

Cd

diode capacitance

VR = 3 V; f = 1 to 100 MHz; note 1

1.1

pF

rD

diode forward resistance

IF = 3 mA; f = 200 MHz; note 1

0.7

Ω

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

315

K/W