STGAP2GSNC datasheet(4/20 Pages) STMICROELECTRONICS

номер детали	STGAP2GSNC

подробное описание детали	Isolated 3 A single gate driver for Enhancement mode GaN FETs

PDF	20 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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Electrical data

3.1

Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Test

condition

Min.

Max.

Unit

VDD

Logic supply voltage vs. GND

- 0.3

VLOGIC

Logic pins voltage vs. GND

- 0.3

Positive supply voltage

(VH vs. GNDISO)

- 0.3

VOUT

Voltage on gate driver outputs

(GON, GOFF vs. GNDISO)

- 0.3

VH + 0.3

Junction temperature

- 40

150

°C

Storage temperature

- 50

150

°C

ESD

HBM (human body model)

3.2

Recommended operating conditions

Table 3. Recommended operating conditions

Symbol

Parameter

Test conditions

Min.

Max.

Unit

VDD

Logic supply voltage vs. GND

3.1

5.5

VLOGIC

Logic pins voltage vs. GND

5.5

Positive supply voltage

(VH vs. GNDISO)

Max(VHon)

dVH/dt

VH power-up transient

VH = 0 to 6 V

100

μs

VISO-OP

Input to output operative voltage (GND to

GNDISO)

DC or peak

-1700

+1700

FSW

Maximum switching frequency.(1)

MHz

Operating Junction Temperature

-40

125

°C

1. Actual limit depends on power dissipation and TJ

3.3

Thermal data

Table 4. Thermal data

Symbol

Parameter

Test condition

Value

Unit

Rth(JA)

Thermal resistance junction to ambient

JEDEC 2s2p PCB in

still air

130

°C/W

STGAP2GSN

Electrical data

DS14151 - Rev 1

page 4/20

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