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SGT65R65AL датащи(PDF) 4 Page - STMicroelectronics

номер детали SGT65R65AL
подробное описание детали  650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor
PDF  17 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Table 5. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,
RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH
(see Figure 20. Test circuit for
inductive load switching times and
Figure 21. Switching time waveforms)
-
4.5
-
ns
tf
Fall time
-
5.6
-
ns
td(off)
Turn-off delay time
-
9.8
-
ns
tr
Rise time
-
10.9
-
ns
td(on)
Turn-on delay time
VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,
RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH,
TC =150 °C
(see Figure 20. Test circuit for
inductive load switching times and
Figure 21. Switching time waveforms)
-
5.2
-
ns
tf
Fall time
-
5.3
-
ns
td(off)
Turn-off delay time
-
10
-
ns
tr
Rise time
-
12.5
-
ns
Eon
Turn-on switching energy
VDS = 400 V, ID = 15 A, VGS = 0 to 6 V,
RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH
-
33.8
-
µJ
Eoff
Turn-off switching energy
-
19.5
-
µJ
Table 6. Reverse conduction
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD
Source-drain reverse voltage
VGS = 0 V, ISD = 15 A
-
3.3
-
V
SGT65R65AL
Electrical characteristics
DS13251 - Rev 7
page 4/17



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