FN4541 Rev 0.00

Page 2 of 2

November 1998

ACS04MS

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Die Characteristics

DIE DIMENSIONS:

Size: 2390

m x 2390m (94 mils x 94 mils)

Thickness: 525

m 25m (20.6 mils 1 mil)

Bond Pad: 110

m x 110m (4.3 x 4.3 mils)

METALLIZATION: AI

Metal 1 Thickness: 0.7

m0.1m

Metal 2 Thickness: 1.0

m0.1m

SUBSTRATE POTENTIAL:

Unbiased Insulator

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30

m 0.15m

SPECIAL INSTRUCTIONS:

Bond VCC First

ADDITIONAL INFORMATION:

Worst Case Current Density: <2.0 x 105 A/cm2

Transistor Count: 82

Metallization Mask Layout

ACS04MS

Y1

A1

VCC

A6

A2 (3)

Y2 (4)

NC

A3 (5)

(12) Y6

(11) A5

NC

(10) Y5

(6)

(7)

(8)

(9)

A4

Y4

GND

Y3

(2)

(1)

(14)

(13)