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BCP68_BC868_BC68PA

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.

Product data sheet

Rev. 8 — 18 October 2011

13 of 23

Nexperia

BCP68; BC868; BC68PA

20 V, 2 A NPN medium power transistors

7.

Characteristics

[1]

Pulse test: tp  300 s;  = 0.02.

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =25V; IE = 0 A

-

-

100

nA

VCB =25V; IE =0A;

Tj = 150 C

--

10

A

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

-

-

100

nA

hFE

DC current gain

VCE =10V

IC =5mA

50

-

-

DC current gain

VCE =1V

IC =500 mA

[1]

85

-

375

IC =1 A

[1]

60

-

-

IC =2 A

[1]

40

-

-

DC current gain

VCE =1V

hFE selection -25

IC =500 mA

[1]

160

-

375

VCEsat

collector-emitter

saturation voltage

IC =1A; IB = 100 mA

[1]

--

0.5

V

IC =2A; IB = 200 mA

[1]

--

0.6

V

VBE

base-emitter voltage

VCE =10V; IC =5mA

[1]

--

0.7

V

VCE =1V; IC =1 A

[1]

--

1

V

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

-22

-

pF

fT

transition frequency

VCE =5V; IC =50 mA;

f=100MHz

40

170

-

MHz