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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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5P4SMA датащи(PDF) 4 Page - Renesas Technology Corp |
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5P4SMA датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 8 page  Data Sheet D17163EJ4V0DS 2 5P4SMA, 5P6SMA MAXIMUM RATINGS Parameter Symbol 5P4SMA 5P6SMA Unit Remarks Non-repetitive Peak Reverse Voltage VRSM 500 700 V − Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Reverse Voltage VRRM 400 600 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − Average On-state Current IT(AV) 5 (TC = 94 °C, single phase half wave, θ = 180°) A Refer to Figure 11. Effective On-state Current IT(RMS) 8 A Surge On-state Current ITSM 80 (50 Hz, sine half wave, 1 cycle) A Refer to Figure 2. 88 (60 Hz, sine half wave, 1 cycle) Fusing Current ∫ iT2dt 28 (1 ms ≤ t ≤ 10 ms) A 2s − Critical Rate Rise of On-state Current dIT/dt 50 A/ μs − Peak Gate Power Dissipation PGM 5 (f ≥ 50 Hz, Duty ≤ 10%) W Refer to Figure 3. Average Gate Power Dissipation PG(AV) 0.5 W Peak Gate Forward Current IFGM 2 (f ≥ 50 Hz, Duty ≤ 10%) A − Peak Gate Reverse Voltage VRGM 10 V − Junction Temperature Tj −40 to +125 °C − Storage Temperature Tstg −55 to +150 °C − ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Remarks Repetitive Peak Reverse Current IRRM VRM = VRRM Tj = 25 °C − − 100 μA − Tj = 125 °C − − 2 mA − Repetitive Peak Off-state Current IDRM VDM = VDRM Tj = 25 °C − − 100 μA − Tj = 125 °C − − 2 mA − On-state Voltage VTM ITM = 10 A − − 1.4 V Refer to Figure 1. Gate Trigger Current IGT VDM = 6 V, RL = 100 Ω − − 10 mA Refer to Figure 4. Gate Trigger Voltage VGT VDM = 6 V, RL = 100 Ω − − 1.5 V Gate Non-trigger Voltage VGD Tj = 125 °C, VDM = 2 1 VDRM 0.2 − − V − Holding Current IH VDM = 24 V, ITM = 10 A − 6 − mA − Critical Rate Rise of Off-state Voltage dv/dt Tj = 125 °C, VDM = 3 2 VDRM − 40 − V/ μs − Circuit Commuted Turn-off Time tq Tj = 125 °C, ITM = 5 A, diR/dt = 15 A/ μs, VR ≥ 25 V, VDM = 3 2 VDRM, dVD/dt = 10 V/μs − 50 − μs − Thermal Resistance Note Rth(j-c) Junction to case DC − − 4.2 °C/W Refer to Figure 13. Rth(j-a) Junction to ambient DC − − 60 °C/W |
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