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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32C011F6P3TR датащи(PDF) 58 Page - STMicroelectronics |
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STM32C011F6P3TR датащи(HTML) 58 Page - STMicroelectronics |
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58 / 94 page  Electrical characteristics STM32C011x4/x6 58/94 DS13866 Rev 3 tprog_bank Bank (32 Kbyte(2)) programming time Normal programming - 0.4 0.6 s Fast programming - 0.2 0.4 tME Mass erase time - - 22.1 40.1 ms IDD(FlashA) Average consumption from VDD Programming - 3.0 - mA Page erase - 3.0 - Mass erase - 5.0 - IDD(FlashP) Maximum current (peak) Programming, 2 µs peak duration -7.0 - mA Erase, 41 µs peak duration - 7.0 - 1. Specified by design – Not tested in production. 2. Values provided also apply to devices with less flash memory than one 32 Kbyte bank Table 42. Flash memory characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 43. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance TJ = -40 to +130 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 1. Evaluated by characterization – Not tested in production.. 2. Cycling performed over the whole temperature range. |
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