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VIPERGAN100TR датащи(PDF) 17 Page - STMicroelectronics

номер детали VIPERGAN100TR
подробное описание детали  Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT
PDF  35 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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VIPERGAN100TR датащи(HTML) 17 Page - STMicroelectronics

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Figure 17. Dynamic blanking time: internal schematic and pin configuration
The result of such dynamic variation is shown in Figure 18: at low input line the switching frequency does not
change (or changes slightly) compared to the case in which dynamic blanking time is not implemented, while
decreases more and more as the input voltage increases.
Figure 18. Typical normalized switching frequency variation over input voltage range
The function beneficially impacts also on the blanking time profile variation versus FB voltage, as shown in
Figure 19: depending on the input voltage, the dynamic blanking time reduces the maximum permitted switching
frequency also at medium/light load, thus further minimizing the related losses.
This method reduces the frequency variation span and, consequently, increases the peak of the primary side
current. The Line Feed-forward compensation must be adjusted to guarantee the same power capability at any
line condition.
Dynamic blanking time and valley synchronization (see relevant section) functions can be disabled connecting the
pin TB to ground. The decision if the function is used or not is taken at power-up: before the pin VDD reaches the
VDD-ON threshold, the current ITB-DIS (200 µA typ.) is sourced from the pin. If the TB pin voltage is lower than the
VTB-DIS threshold (100 mV typ.), the pin is assumed to be connected to GND, the related circuitry is disabled, and
the information is latched until the next power-on.
VIPERGAN100
Dynamic blanking time
DS14000 - Rev 1
page 17/35



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