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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32U595AI датащи(PDF) 187 Page - STMicroelectronics |
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STM32U595AI датащи(HTML) 187 Page - STMicroelectronics |
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187 / 377 page  DS13633 Rev 1 187/377 STM32U59xxx Electrical characteristics 343 Figure 26. VREFINT versus temperature 5.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Section 5.1.7: Current consumption measurement. IDD(VREFINTBUF) (3) VREFINT buffer consumption from VDD when converted by the ADC - - 1.5 2.1 µA ∆VREFINT(4) Internal reference voltage spread over the temperature range VDD = 3 V - 6 11.5 mV TCoeff(4) Average temperature coefficient –40°C < TJ < +130 °C - 40 125 ppm/°C ACoeff(3) Long term stability 1000 hours, TJ = 25 °C - 400 1000 ppm VDDCoeff(4) Average voltage coefficient 3.0 V ≤ VDD ≤ 3.6 V - 500 2900 ppm/V VREFINT_DIV1(3) 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2(3) 1/2 reference voltage 49 50 51 VREFINT_DIV3(3) 3/4 reference voltage 74 75 76 1. VREFINT does not take into account package and soldering effects. 2. The shortest sampling time for the application can be determined by multiple iterations. 3. Specified by design. Not tested in production 4. Evaluated by characterization. Not tested in production. Table 35. Embedded internal voltage reference (continued) Symbol Parameter Conditions Min Typ Max Unit MSv69159V1 |
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