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STM32H7B0IB датащи(PDF) 77 Page - STMicroelectronics

номер детали STM32H7B0IB
подробное описание детали  32-bit Arm® Cortex®-M7 280 MHz MCUs, 128-Kbyte Flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  205 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32H7B0IB датащи(HTML) 77 Page - STMicroelectronics

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Table 31. Inrush current and inrush electric charge characteristics for LDO and SMPS
1.
The typical values are given for VDDLDO = VDDSMPS = 3.3 V and for typical decoupling capacitor values of CEXT and COUT.
2.
The product consumption on VDDCORE is not taken into account in the inrush current and inrush electric charge.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
IRUSH
Inrush current on voltage regulator power-on
(POR or wakeup from Standby)
on VDDLDO(1)
-
55
96 (2)
mA
on VDDSMPS(3) SMPS supplies the VDDCORE
-
25
92(4)
Inrush current on voltage regulator power-on
(POR)
on VDDSMPS(3)
SMPS supplies internal LDO VOUT =
1.8 V(5)
-
45
135(4)
SMPS supplies internal LDO VOUT =
2.5 V(5)
-
100(4)
SMPS supplies external circuit VOUT
= 1.8 V(5)
-
25
70(4)
SMPS supplies external circuit VOUT
= 2.5 V(5)
-
50(4)
Inrush current on voltage regulator power-on
(wakeup from Standby)
on VDDSMPS(3)
SMPS supplies internal LDO VOUT =
1.8 V
-
70
200(4)
SMPS supplies internal LDO VOUT =
2.5 V
-
95
210(4)
QRUSH
Inrush current on voltage regulator power-on
(POR or wakeup from Standby)
on VDDLDO(1)
-
4.4
5.3(2)
μC
on VDDSMPS(3) SMPS supplies the VDDCORE
-
2.9
7(2)
Inrush current on voltage regulator power-on
(POR)
on VDDSMPS(3)
SMPS supplies internal LDO VOUT =
1.8 V(5)
-
4.0
7.5(2)
SMPS supplies internal LDO VOUT =
2.5 V(5)
-
5.7(2)
SMPS supplies external circuit VOUT
= 1.8 V(5)
-
2.9
5.2(2)
SMPS supplies external circuit VOUT
= 2.5 V(5)
-
4(2)
Inrush current on voltage regulator power-on
(wakeup from Standby)
on VDDSMPS(3)
SMPS supplies internal LDO VOUT =
1.8 V
-
8.0
15(2)
SMPS supplies internal LDO VOUT =
2.5 V
-
14.5 20.5(2)
1. The inrush current and inrush electric charge on VDDLDO are not present in Bypass mode or when the SMPS supplies VDDCORE.
2. The maximum value is given for the maximum decoupling capacitor CEXT.
3. The inrush current and inrush electric charge on VDDSMPS is not present if the external component (L or COUT) is not present, that is if the
SMPS is not used.
4. The maximum value is given for the maximum decoupling capacitor COUT and the minimum VDDSMPS voltage.
5. The inrush current and inrush electric charge due to the transition from 1.2 V to the final VOUT value (1.8 V or 2.5 V) is not taken into
account.
STM32H7B0xB
Operating conditions
DS13196 - Rev 7
page 77/205



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