3.2

SiC Schottky Diode Ratings and Characteristics

The following table shows the SiC Schottky diode ratings and characteristics of the MSCSM70AM10CT3AG

device.

Table 5 • SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)

Unit

Max

Typ

Min

Test Conditions

Characteristic

Symbol

V

700

Peak repetitive reverse voltage

VRRM

μA

400

30

TJ = 25 °C

VR = 700 V

Reverse leakage current

IRM

500

TJ = 175 °C

A

100

TC = 75 °C

DC forward current

IF

V

1.8

1.5

TJ= 25 °C

IF = 100 A

Diode forward voltage

VF

1.9

TJ = 175 °C

nC

266

VR = 400 V

Total capacitive charge

Qc

pF

496

f = 1 MHz, VR = 200 V

Total capacitance

C

432

f = 1 MHz, VR = 400 V

°C/W

0.456

Junction-to-case thermal resistance

RthJC

3.3

Thermal and Package Characteristics

The following table shows the package characteristics of the MSCSM70AM10CT3AG device.

Table 6 • Thermal and Package Characteristics

Unit

Max

Min

Characteristic

Symbol

V

4000

RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz

VISOL

°C

175

–40

Operating junction temperature range

TJ

TJmax–25

–40

Recommended junction temperature under switching conditions

TJOP

125

–40

Storage temperature range

TSTG

125

–40

Operating case temperature

TC

N.m

3

2

M4

To heatsink

Mounting torque

Torque

g

110

Package weight

Wt

6

Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0

Electrical Specifications