Nexperia

BSP60

PNP Darlington transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-60

V

VCES

collector-emitter voltage base short-circuited to emitter

-

-45

V

VEBO

emitter-base voltage

open collector

-

-5

V

IC

collector current

-

-1

A

ICM

peak collector current

-

-2

A

IBlim

limiting base current

-

-100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

1.25

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

[1]

-

-

98

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

-

-

17

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2.

BSP60

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2018. All rights reserved

Product data sheet

2 May 2018

3 / 10