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TLWR992 датащи(PDF) 2 Page - Vaishali Semiconductor

номер детали TLWR992
подробное описание детали  TELUX / Utilizing one of the world?셲 brightest (AS) AllnGaP technologies (OMA) / High luminous flux
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производитель  VAISH [Vaishali Semiconductor]
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TLWR992 датащи(HTML) 2 Page - Vaishali Semiconductor

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Document Number 83286
Rev. 1.2, 30-Nov-04
VISHAY
TLWR992.
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLW.992.
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLW.992.
Forward Voltage Classification
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
IR = 100 µAVR
10
V
DC Forward current
Tamb ≤ 85 °C
IF
70
mA
Surge forward current
tp ≤ 10 µsIFSM
0.1
A
Power dissipation
Tamb ≤ 85 °C
PV
190
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 110
°C
Storage temperature range
Tstg
- 55 to + 110
°C
Soldering temperature
t
≤ 5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
Tsd
260
°C
Thermal resistance junction/
ambient
with cathode heatsink
of 70 mm2
RthJA
200
K/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Total flux
IF = 70 mA, RthJA = 200 °K/W
TLWR9920
φ
V
3000
3700
mlm
TLWR9921
φ
V
3500
4200
mlm
TLWR9922
φ
V
4000
5000
mlm
Luminous intensity/Total flux
IF = 70 mA, RthJA = 200 °K/W
IVV
0.7
mcd/
mlm
Dominant wavelength
IF = 70 mA, RthJA = 200 °K/W
λ
d
611
615
634
nm
Peak wavelength
IF = 70 mA, RthJA = 200 °K/W
λ
p
624
nm
Angle of half intensity
IF = 70 mA, RthJA = 200 °K/W
ϕ
± 45
deg
Total included angle
90 % of Total Flux Captured
ϕ
0.9V
100
deg
Forward voltage
IF = 70 mA, RthJA = 200 °K/W
VF
1.83
2.5
3.03
V
Reverse voltage
IR = 100 µAVR
10
20
V
Temperature coefficient <
λ
d
IF = 70 mA
TC
λ
d
17
nm/K
Temperature coefficient VF
IF = 70 mA, T > - 25 °C
TCVF
- 2.9
mV/K
Group
Forward Voltage (V)
min
max
Y
1.83
2.07
Z
1.95
2.19
0
2.07
2.31
1
2.19
2.43
2
2.31
2.55
3
2.43
2.67
4
2.55
2.79
5
2.67
2.91
6
2.79
3.03



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