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PESDXS2UT_SER датащи(PDF) 3 Page - Nexperia B.V. All rights reserved

номер детали PESDXS2UT_SER
подробное описание детали  Double ESD protection diodes in SOT23 package
PDF  14 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
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PESDXS2UT_SER датащи(HTML) 3 Page - Nexperia B.V. All rights reserved

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2004 Apr 15
2
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: P
pp = 330 W at tp = 8/20 µs
• Low clamping voltage: V
(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: I
RM < 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
pp = 18 A at tp = 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1.
* = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE(1)
PESD3V3S2UT
*U9
PESD5V2S2UT
*U1
PESD12VS2UT
*U2
PESD15VS2UT
*U3
PESD24VS2UT
*U4
SYMBOL
PARAMETER
VALUE
UNIT
VRWM
reverse stand-off
voltage
3.3, 5.2, 12, 15
and 24
V
Cd
diode capacitance
VR = 0 V;
f = 1 MHz
207, 152, 38, 32
and 23
pF
number of
protected lines
2
PIN
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
sym022
2
1
3
1
2
001aaa490
3
Fig.1 Simplified outline (SOT23) and symbol.



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