Philips Semiconductors

Product specification

74LVC27

Triple 3-input NOR gate

1998 Apr 28

4

In accordance with the Absolute Maximum Rating System (IEC 134)

Voltages are referenced to GND (ground = 0V)

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

DC supply voltage

–0.5 to +6.5

V

DC input diode current

–50

mA

DC input voltage

Note 2

–0.5 to +5.5

V

DC output diode current

"50

mA

DC output voltage

Note 2

V

DC output source or sink current

"50

mA

"100

mA

Storage temperature range

–60 to +150

°C

Power dissipation per package

– plastic mini-pack (SO)

above +70

°C derate linearly with 8 mW/K

500

mW

– plastic shrink mini-pack (SSOP and TSSOP)

above +60

°C derate linearly with 5.5 mW/K

500

mW

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

DC ELECTRICAL CHARACTERISTICS

Over recommended operating conditions voltages are referenced to GND (ground = 0V)

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Temp = -40

°C to +85°C

UNIT

MIN

MAX

V

HIGH level Input voltage

V

HIGH level Input voltage

2.0

V

V

LOW level Input voltage

GND

V

LOW level Input voltage

0.8

V

HIGH level output voltage

V

HIGH level output voltage

V

0.40

LOW level output voltage

GND

0.20

V

0.55

I

Input leakage current

V

=3 6V; V = 5 5V or GND

"01

"5

µA

Input leakage current

"0.1

"5

µA

Quiescent supply current

0.1

10

µA

Additional quiescent supply current per

input pin

5

500

µA

NOTE: