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MOS FIELD EFFECT TRANSISTOR

2SJ331

SWITCHING

P-CHANNEL POWER MOS FET

DATA SHEET

Document No.

D18444EJ2V0DS00 (2nd edition)

(Previous No. TC-2469)

Date Published

November 2006 NS CP(K)

Printed in Japan

1993, 2006

DESCRIPTION

The 2SJ311 is P-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

FEATURES

• Low on-state resistance

RDS(on)1 = 26 m

Ω TYP. (VGS = −10 V, ID = −15 A)

RDS(on)2 = 40 m

Ω TYP. (VGS = −4 V, ID = −12 A)

• Low input capacitance Ciss = 4300 pF TYP.

• Built-in G-S gate protection diodes

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−60

V

Gate to Source Voltage (VDS = 0 V)

VGSS(AC)

VGSS(DC)

m20

−20, +10

V

V

Drain Current (DC)

ID(DC)

m30

A

Drain Current (pulse)

Note

ID(pulse)

m120

A

Total Power Dissipation (TC = 25

°C)

PT1

150

W

Total Power Dissipation (TA = 25

°C)

PT2

3.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note

PW

≤ 10

μs, Duty cycle ≤ 1%

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