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SILICON TRANSISTOR

2SD596A

AUDIO FREQUENCY POWER AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

DATA SHEET

Document No. D17880EJ1V0DS00 (1st edition)

Date Published December 2005 NS CP(K)

Printed in Japan

c

2005

PACKAGE DRAWING

(Unit: mm)

FEATURES

• Complementary to NEC 2SB624 PNP Transistor.

• High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

25

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC

700

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cut-off Current

ICBO

100

nA

VCB = 30 V, IE = 0 A

Emitter Cut-off Current

IEBO

100

nA

VEB = 5.0 V, IC = 0 A

hFE1

110

200

400

VCE = 1.0 V, IC = 100 mA

Note

DC Current Gain

hFE2

50

VCE = 1.0 V, IC = 700 mA

Note

Collector Saturation Voltage

VCE(sat)

0.22

0.6

V

IC = 700 mA, IB = 70 mA

Note

Base to Emitter Voltage

VBE

600

640

700

mV

VCE = 6.0 V, IC = 10 mA

Note

Gain Bandwidth Product

fT

170

MHz

VCE = 6.0 V, IE =

−10 mA

Output Capacitance

Cob

12

pF

VCB = 6.0 V, IE = 0 A, f = 1.0 MHz

Note Pulsed: PW

≤ 350

μs, Duty Cycle ≤ 2%

hFE1 CLASSIFICATION

Marking

DV1

DV2

DV3

DV4

DV5

hFE

110 to 180

135 to 220

170 to 270

200 to 320

250 to 400

1. Emitter

2. Base

3. Collector