Data Sheet PU10008EJ02V0DS

10

2SC5754

EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD

VCE = 3.2 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

30

25

20

15

10

5

0

300

50

100

150

250

200

0

–10

5

0

–5

10

15

20

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

GP

Pout

IC

C

η

VCE = 3.2 V, f = 1.8 GHz

ICq = 20 mA, 1/2 Duty

30

25

20

15

10

5

0

300

50

100

150

250

200

0

–10

5

0

–5

10

15

20

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

GP

Pout

IC

C

η

VCE = 3.6 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

30

25

20

15

10

5

0

300

50

100

150

250

200

0

–10

5

0

–5

10

15

20

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

GP

Pout

IC

C

η

VCE = 3.6 V, f = 1.8 GHz

ICq = 20 mA, 1/2 Duty

30

25

20

15

10

5

0

300

50

100

150

250

200

0

–10

5

0

–5

10

15

20

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

GP

Pout

IC

C

η

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.csd-nec.com/