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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5745 датащи(PDF) 4 Page - Renesas Technology Corp |
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2SC5745 датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 26 page  Data Sheet P15439EJ1V0DS 2 2SC5745 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 100 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA – – 100 nA DC Current Gain hFE Note 1 VCE = 1 V, IC = 10 mA 100 – 145 – RF Characteristics Gain Bandwidth Product fT VCE = 1 V, IC = 10 mA, f = 2 GHz 4.0 5.5 – GHz Insertion Power Gain S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz 3.0 4.5 – dB Noise Figure NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt –2.0 3.0 dB Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IE = 0 mA, f = 1 MHz 0.7 0.8 0.9 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB Marking TY hFE Value 100 to 145 |
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