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2SC5507 датащи(PDF) 5 Page - Renesas Technology Corp

номер детали 2SC5507
подробное описание детали  NPN SILICON RF TRANSISTOR
PDF  12 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5507 датащи(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10522EJ01V0DS
3
2SC5507
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Thermal/DC Characteristics
0.001
200
100
10
25
20
15
10
5
01
2
3
4
5
1
0.01
0.1
1
10
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
15
10
5
250
200
150
100
50
0
Ptot-TA: Free air
Ptot-TA: Mounted on ceramic board
(15 mm
× 15 mm, t = 0.6 mm)
Ptot-TC: When case temperature
is specified
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 2 V
VCE = 2 V
IB =
A
20
µ
A
40
µ
A
60
µ
A
80
µ
A
100
µ
A
120
µ
A
140
µ
A
160
µ
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
Base to Emitter Voltage VBE (V)
Capacitance/fT Characteristics
1
0.30
0.25
0.20
0.15
0.10
0.05
0
1.0
2.0
3.0
4.0
5.0
30
25
20
15
10
5
0
10
100
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
f = 1 MHz
VCE = 3 V
f = 2 GHz
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.



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