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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5369 датащи(PDF) 3 Page - Renesas Technology Corp |
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2SC5369 датащи(HTML) 3 Page - Renesas Technology Corp |
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3 / 14 page  2SC5369 SILICON TRANSISTOR Document No. P11644EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan FEATURES • High fT 14 GHz TYP. • High gain | S21e | 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA • 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 150 mW Junction Temperature TI 150 °C Storage Temperature Tstg –65 to +150 °C PACKAGE DIMENSION (in mm) PIN CONNECTIONS 1. Emitter 4. Emitter 2. Emitter 5. Emitter 3. Base 6. Collector NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION © 1996 PRELIMINARY DATA SHEET 2.1±0.1 1.25±0.1 |
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