©

1994

DATA SHEET

SILICON TRANSISTOR

FEATURES

PACKAGE DRAWINGS

•

Low Voltage Operation, Low Phase Distortion

(Unit: mm)

•

Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Large Absolute Maximum Collector Current

IC = 100 mA

•

4-Pin Compact Mini Mold Package

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

2SC5194-T1

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to perforation

side of the tape.

2SC5194-T2

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 1 (Collector), Pin 2 (Emitter) face to

perforation side of the tape.

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

100

mA

Total Power Dissipation

PT

150

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

2SC5194

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

2.1±0.2

1.25±0.1

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Document No. P10397EJ2V0DS00 (2nd edition)

(Previous No. TD-2487)

Date Published August 1995 P

Printed in Japan