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74LVC1G06 датащи(PDF) 2 Page - NXP Semiconductors |
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74LVC1G06 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2004 Sep 07 2 Philips Semiconductors Product specification Inverter with open-drain output 74LVC1G06 FEATURES • Wide supply voltage range from 1.65 to 5.5 V • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V) •±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Inputs accept voltages up to 5 V • Multiple package options • ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74LVC1G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment. Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G06 provides the inverting buffer. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPHL/tPLH propagation delay inputs A to output Y VCC = 1.8 V; CL = 30 pF; RL =1kΩ 3ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 1.9 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.5 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.3 ns VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.7 ns CI input capacitance 5 pF CPD power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 6 pF |
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