Nexperia

BAT721

40 V, 200 mA Schottky barrier diode

9. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

300

mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

420

mV

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

550

mV

VR = 30 V; Tamb = 25 °C

-

-

15

µA

IR

reverse current

VR = 30 V; Tj = 100 °C

-

-

3

mA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

40

50

pF

006aaa689

1

10

102

103

IF

(mA)

10- 1

VF (mV)

0

600

400

200

(1) (2)

(3)

(4)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

006aaa690

IR

(mA)

VR (V)

0

40

30

10

20

10- 4

10- 2

1

10

10- 5

10- 3

10- 1

10- 6

(1)

(2)

(3)

(4)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

40

30 VR (V)

Cd

(pF)

0

10

20

102

10

1

mbk574

Tamb = 25 °C; f = 1 MHz

Fig. 3. Diode capacitance as a function of reverse voltage; typical values

BAT721

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

1 October 2022

3 / 8