©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5182

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

•

Low noise

•

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

•

NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Mini-Mold package

EIAJ: SC-59

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5182-T1

Embossed tape, 8 mm wide,

Pin No. 3 (Collector)

facing the perforations

2SC5182-T2

3 000 units/reel

Embossed tape, 8 mm wide,

Pins No. 1 (Emitter) and No. 2 (Base)

facing the perforations

* Contact your NEC sales representative to order samples for evaluation

(available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12106EJ2V0DS00 (2nd edition)

(Previous No. TC-2479)

Date Published November 1996 N

Printed in Japan

PACKAGE DIMENSIONS

(Units: mm)

1.5

2.8±0.2

0.65 –0.15

+0.1

3

2

1

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector