2SC4885 datasheet(3/14 Pages) RENESAS

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DATA SHEET

SILICON TRANSISTOR

2SC4885

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS SUPER MINI MOLD

DATA SHEET

Document No. P10410EJ2V0DS00 (2nd edition)

(Previous No, TC-2365)

Date Published March 1997 N

Printed in Japan

1993

FEATURES

• Excellent Low NF in Low Frequency Band

• Low Voltage Use

• Low Cob : 0.9 pF TYP.

• Low Noise Voltage : 90 mV TYP.

• Super Mini Mold Package. EIAJ : SC-70

ABSOLUTE MAXIMUM RATINGS (Ta = 25

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

3.0

Collector Current

Total Power Dissipation

120

Junction Temperature

125

Storage Temperature

Tstg

55 to +125

ELECTRICAL CHARACTERISTICS (Ta = 25

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

0.1

AVCB = 15 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

AVEB = 2 V, IC = 0

Collector to Base Saturation Voltage

VCE (sat)

0.3

hFE = 10, IC = 5 mA

DC Current Gain

hFE

150

VCE = 5 V, IC = 5 mA

Gain Bandwidth Product

2.5

3.5

GHz

VCE = 5 V, IC = 5 mA

Collecter Capacitance

Cob

0.8

1.2

VCB = 5 V, IE = 0, f = 1 MHz

Insertion Power Gain

S21e2

7.0

9.0

VCE = 5 V, IC = 5 mA, f = 1 GHz

Noise Figure

3.0

VCE = 5 V, IC = 5 mA, f = 1 GHz

Noise Voltage

200

See Test Cirucit

*1 Pulse Measurement PW

350 s, Duty Cycle 2 %

hFE Classification

Rank

R13

Marking

R13

hFE

60 to 150

PACKAGE DIMENSIONS

(Units: mm)

1.25±0.1

Marking

PIN CONNECTIONS

Emitter

Base

Collector

2.1±0.1

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