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1998

©

Document No. D15603EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC4813

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat).

This transistor is ideal for use as a driver in DC/DC converters and actuators.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

• Low VCE(sat): VCE(sat)

≤ 0.3 V

@IC = 3.0 A, IB = 30 mA

• High hFE:

hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A

• On-chip dumper-diode

• Auto-mounting possible in radial taping specifications

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

100

V

Collector to emitter voltage

VCEO

100

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

±7.5

A

Collector current (pulse)

IC(pulse)

PW

≤ 10 ms, duty cycle ≤ 2%

±10

A

Base current (DC)

IB(DC)

2.0

A

Total power dissipation

PT

Ta = 25

°C

1.8

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C