The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

NPN SILICON EPITAXIAL TRANSISTOR

2SC4783

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. D15616EJ2V0DS00 (2nd edition)

Date Published October 2004 NS CP(K)

Printed in Japan

2001

The mark

shows major revised points.

DESCRIPTION

The 2SC4783 is NPN silicon epitaxial transistor.

FEATURES

• High DC current gain: hFE2 = 200 TYP.

• High voltage: VCEO = 50 V

• Can be automatically mounted

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SC4783

SC-75 (USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC(DC)

100

mA

Collector Current (pulse)

Note1

IC(pulse)

200

mA

Total Power Dissipation

Note2

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

–55 to + 150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 3.0 cm

2 x 0.64 mm

PACKAGE DRAWING (Unit: mm)

0.3

2

0.2

+0.1

–0

0.5

1: Emitter

2: Base

3: Collector

0.5

1.0

1.6 ± 0.1

3

1

0.6

0.75 ± 0.05

0 to 0.1

0.15

+0.1

–0.05

+0.1

–0