Frequency f (GHz)

INSERTION POWER GAIN

vs. FREQUENCY

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

25

20

15

10

5

0

0.2

0.5

0.1

1.0

2.0

5.0

IC = 5 mA

VCE = 5 V

8

4

16

12

0

0.5

1

5

210

20

50

f = 1 GHz

VCE = 5 V

VCE = 3 V

VCE = 3 V

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.ncsd.necel.com/

Data Sheet PU10514EJ01V0DS

4

2SC4570