2SC4342 datasheet(4/8 Pages) RENESAS

номер детали	2SC4342

подробное описание детали	SILICON POWER TRANSISTOR

PDF	8 Pages

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производитель	RENESAS [Renesas Technology Corp]

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Data Sheet D14862EJ3V0DS

2SC4342

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 100 V, IE = 0 A

1.0

µA

Emitter Cut-off Current

IEBO

VEB = 5.0 V, IC = 0 A

5.0

DC Current Gain

Note

hFE1

VCE = 2.0 V, IC = 1.5 A

2000

20000

hFE2

VCE = 2.0 V, IC = 3.0 A

1000

Collector Saturation Voltage

Note

VCE(sat)

IC = 1.5 A, IB = 1.5 mA

1.5

Base Saturation Voltage

Note

VBE(sat)

IC = 1.5 A, IB = 1.5 mA

2.0

Turn-on Time

ton

IC = 1.5 A, RL = 33

Ω

0.3

µs

Storage Time

tstg

IB1 =

−IB2 = 3.0 mA, VCC 50 V

1.5

µs

Fall Time

Refer fo the switching time (ton, tstg, tf)

test circuit

0.4

µs

Note Pulsed test PW

≤ 350

µs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

2000 to 5000

4000 to 10000

8000 to 20000

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

VCC

IB1

IB2

T.U.T.

VIN

PW = 50 s

VBB =

−5.0 V

Duty Cycle

≤ 2%

Base current

waveform

Collector current

waveform

ton

tstg tf

90%

IB1

IB2

10%

★

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