2SC3623 datasheet(4/6 Pages) RENESAS

номер детали	2SC3623

подробное описание детали	SILICON TRANSISTORS

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Data Sheet D13521JJ4V0DS

2SC3623, 3623A

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

100

Emitter cutoff current

IEBO

VEB = 10 V, IC = 0

100

DC current gain

hFE1

VCE = 5.0 V, IC = 1.0 mA*

1000

1800

3200

−

DC current gain

hFE2

VCE = 5.0 V, IC = 100 mA*

200

350

DC base voltage

VBE

VCE = 5.0 V, IC = 1.0 mA*

560

Collector saturation voltage

VCE(sat)

IC = 50 mA, IB = 5.0 mA*

0.07

0.30

Base saturation voltage

VBE(sat)

IC = 50 mA, IB = 5.0 mA*

0.8

1.2

Gain bandwidth product

VCE = 5.0 V, IE =

−10 mA

250

MHz

Output capacitance

Cob

VCB = 5 V, IE = 0, f = 1.0 MHz

3.0

Turn-on time

ton

0.13

µs

Storage time

tstg

0.72

µs

Turn-off time

toff

VCC = 10 V, VBE(off) = –2.7 V

IC = 50 mA

IB1 =

−IB2 = 1 mA

1.22

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

1000 to 2000

1600 to 3200

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

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