M25P20 datasheet(38/50 Pages) STMICROELECTRONICS

номер детали	M25P20

подробное описание детали	2 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

PDF	50 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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38 / 50 page

DC and AC parameters

M25P20

38/50

This is preliminary data

Table 14.

DC Characteristics (Device Grade 3)

Symbol

Parameter

Test Condition (in addition to

those in

Table 10)

Min.(1)

Max.(1)

Unit

ILI

Input Leakage Current

± 2

µA

ILO

Output Leakage Current

± 2

µA

ICC1

Standby Current

S = VCC, VIN = VSS or VCC

100

µA

ICC2

Deep Power-down Current

S = VCC, VIN = VSS or VCC

µA

ICC3

Operating Current (READ)

C = 0.1VCC / 0.9.VCC at 25MHz,

Q = open

8mA

C = 0.1VCC / 0.9.VCC at 20MHz,

Q = open

4mA

ICC4

Operating Current (PP)

S = VCC

ICC5

Operating Current (WRSR)

S = VCC

ICC6

Operating Current (SE)

S = VCC

ICC7

Operating Current (BE)

S = VCC

VIL

Input Low Voltage

– 0.5

0.3VCC

VIH

Input High Voltage

0.7VCC VCC+0.4

VOL

Output Low Voltage

IOL = 1.6 mA

0.4

VOH

Output High Voltage

IOH = –100 µA

VCC–

0.2

Table 15.

Instruction Times (Device Grade 6)

Test conditions specified in

Table 10 and Table 17

Symbol

Alt.

Parameter

Min.

Typ.

Max.

Unit

Write Status Register Cycle Time

tPP

(1)

When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1

≤n ≤

256)

Page Program Cycle Time (256 Bytes)

1.4

5ms

Page Program Cycle Time (n Bytes)

0.4+

n*1/256

tSE

Sector Erase Cycle Time

0.8

tBE

Bulk Erase Cycle Time

2.5

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