Philips Semiconductors

Product specification

74LVC10

Triple 3-input NAND gate

1997 Apr 28

3

LOGIC SYMBOL (IEEE/IEC)

5

SV00418

1

2

12

4

6

8

9

10

11

13

&

&

&

3

LOGIC DIAGRAM (ONE GATE)

SV00419

A

B

C

Y

FUNCTION TABLE

INPUTS

OUTPUTS

nA

nB

nC

nY

L

L

L

H

L

L

H

H

L

H

L

H

L

H

H

H

H

L

L

H

H

L

H

H

H

H

L

H

H

H

H

L

NOTES:

H = HIGH voltage level

L = LOW voltage level

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

DC supply voltage (for max. speed performance)

2.7

3.6

V

DC supply voltage (for low-voltage applications)

1.2

3.6

V

DC input voltage range

0

5.5

V

DC input voltage range for I/Os

0

V

DC output voltage range

0

V

Operating free-air temperature range

–40

+85

°C

Input rise and fall times

0

0

20

10

ns/V

In accordance with the Absolute Maximum Rating System (IEC 134).

Voltages are referenced to GND (ground = 0V).

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

DC supply voltage

–0.5 to +6.5

V

DC input diode current

–50

mA

DC input voltage

Note 2

–0.5 to +5.5

V

DC input voltage range for I/Os

V

DC output diode current

"50

mA

DC output voltage

Note 2

V

DC output source or sink current

"50

mA

"100

mA

Storage temperature range

–60 to +150

°C

Power dissipation per package

– plastic mini-pack (SO)

above +70

°C derate linearly with 8 mW/K

500

mW

– plastic shrink mini-pack (SSOP and TSSOP)

above +60

°C derate linearly with 5.5 mW/K

500

mW

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.