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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT8613 датащи(PDF) 16 Page - Analog Devices |
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LT8613 датащи(HTML) 16 Page - Analog Devices |
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16 / 30 page  LT8645S/LT8646S 16 Rev. B For more information www.analog.com APPLICATIONS INFORMATION Low EMI PCB Layout The LT8645S/LT8646S is specifically designed to mini- mize EMI emissions and also to maximize efficiency when switching at high frequencies. For optimal performance the LT8645S/LT8646S should use multiple VIN bypass capacitors. Two small 0.47µF capacitors can be placed as close as possible to the LT8645S/LT8646S: One capacitor on each side of the device (COPT1, COPT2). A third capacitor with a larger value, 4.7µF or higher, should be placed near COPT1 or COPT2. See Figure 1 for recommended PCB layouts. Figure 1. Recommended PCB Layouts for the LT8645S and LT8646S 8645S F01a GROUND VIA VIN VIA VOUT VIA OTHER SIGNAL VIAS V V V V V C1 R2 R1 CSS RT COPT1 CIN3 COUT L a) LT8645S COPT2 8645S F01b GROUND VIA VIN VIA VOUT VIA OTHER SIGNAL VIAS V V V V C1 R2 R1 CSS RT COPT1 CIN3 COUT L b) LT8646S COPT2 V CF RC CC |
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