STB130NH02L datasheet(3/13 Pages) STMICROELECTRONICS

номер детали	STB130NH02L

подробное описание детали	N-CHANNEL 24V - 0.0034 ??- 120A D²PAK/TO-220 STripFET??III POWER MOSFET FOR DC-DC CONVERSION

PDF	13 Pages

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STB130NH02L STP130NH02L

Table 8: SWITCHING ON

Table 9: SWITCHING OFF

Table 10: SOURCE DRAIN DIODE

(1) Garanted when external Rg=4.7

Ω and tf < tfmax.

(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Value limited by wire bonding

(6) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A

(3) Pulse width limited by safe operating area.

(7) Gate charge for synchronous operation

(4) Starting Tj = 25 oC, ID = 45A, VDD = 10V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 10 V

ID = 45 A

RG =4.7 Ω

VGS = 10 V

(Resistive Load, Figure )

224

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=10 V ID=90 A VGS=10 V

Qoss(6)

Output Charge

VDS= 16 V

VGS= 0 V

Qgls(7)

Third-quadrant Gate Charge

VDS< 0 V

VGS= 10 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 10 V

ID = 45 A

RG =4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain Current

Source-drain Current (pulsed)

360

VSD (5)

Forward On Voltage

ISD = 45 A

VGS = 0

1.3

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 90 A

di/dt = 100A/µs

VDD = 15 V

Tj = 150°C

(see test circuit, Figure 5)

2.5

ELECTRICAL CHARACTERISTICS (continued)

Figure 3: Safe Operating Area

Figure 4: Thermal Impedance

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